SIGC81T60NCX7SA1
- Mfr.Part #
- SIGC81T60NCX7SA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 3 CHIP 600V WAFER
- Stock
- 13,781
- In Stock :
- 13,781
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- Die
- Current - Collector (Ic) (Max) :
- 100A
- IGBT Type :
- NPT
- Operating Temperature :
- -55°C~150°C TJ
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 95ns/200ns
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- Die
- Test Condition :
- 300V, 100A, 2.2Ohm, 15V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 100A
- Current - Collector Pulsed (Icm) :
- 300A
- Datasheets
- SIGC81T60NCX7SA1

SIGC81T60NCX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SIGC81T60NCX7SA1 Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) contains monolithic circuitry that combines ESD and Overvoltage clamping protection for use in inductive coil drivers applications. Some of the most frequent uses include direct fuel injection, ignition, and others that require high voltage and high current switching.
SIGC81T60NCX7SA1 Features
-
Low Threshold Voltage Interface Power Loads to Logic or Microprocessor Devices
-
Saturation Voltage Drop
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High-Pulsed Current Handling Capability
SIGC81T60NCX7SA1 Applications
Drives
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