SIGC03T60EX1SA1
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- Mfr.Part #
- SIGC03T60EX1SA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT CHIP
- Stock
- 48,282
- In Stock ：
- 48,282
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2016
- Drain to Source Voltage (Vdss) :
- 600V
- Collector Emitter Voltage (VCEO) :
- 600V
- Gate-Emitter Voltage-Max :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -40°C~175°C TJ
- Lead Free :
- Lead Free
- Input Type :
- Standard
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- TRENCHSTOP™
- Package / Case :
- Die
- Pbfree Code :
- No
- Halogen Free :
- Halogen Free
- IGBT Type :
- Trench Field Stop
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 4A
- Current - Collector Pulsed (Icm) :
- 12A
- Max Dual Supply Voltage :
- 600V
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Datasheets
- SIGC03T60EX1SA1
SIGC03T60EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SIGC03T60EX1SA1 Description
SIGC03T60EX1SA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC03T60EX1SA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC03T60EX1SA1 has the common source configuration.
SIGC03T60EX1SA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC03T60EX1SA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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