SIGC28T65EX1SA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

-

Package Quantity :

1

Switching Energy :

-

Package :

Bulk

Minimum Operating Temperature (°C) :

-40

IGBT Type :

Trench Field Stop

Lifecycle Status :

Production (Last Updated: 2 years ago)

Typical Collector Emitter Saturation Voltage (V) :

1.45

Automotive :

No

Collector Emitter Voltage (VCEO) :

650 V

PPAP :

No

Package / Case :

Die

Collector Emitter Saturation Voltage :

1.9

Mounting Type :

Surface Mount

Current - Collector Pulsed (Icm) :

150 A

Maximum Gate Emitter Leakage Current (uA) :

0.15

Maximum Collector-Emitter Voltage (V) :

650

Continuous Collector Current :

50

Channel Type :

N

Lead Free :

Lead Free

Voltage - Collector Emitter Breakdown (Max) :

650 V

Package Width :

4.2

Maximum Gate Emitter Voltage (V) :

±20

Halogen Free :

Halogen Free

Test Condition :

-

Packaging :

Wafer

Max Dual Supply Voltage :

650 V

Min Operating Temperature :

-40 °C

PCB changed :

3

Package Height :

0.07

Supplier Package :

Die

Product Status :

Active

Pin Count :

3

Max Operating Temperature :

175 °C

Base Product Number :

SIGC28

Series :

TRENCHSTOP™

ECCN (US) :

EAR99

Vce(on) (Max) @ Vge, Ic :

1.77V @ 15V, 50A

Maximum Operating Temperature (°C) :

175

RoHS :

Non-Compliant

Current - Collector (Ic) (Max) :

50 A

Package Length :

6.57

Operating Temperature :

-40°C ~ 175°C (TJ)

Supplier Device Package :

Die

Input Type :

Standard

Drain to Source Voltage (Vdss) :

650 V

EU RoHS :

Compliant

Configuration :

Single