SIGC18T60UNX1SA2
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- Mfr.Part #
- SIGC18T60UNX1SA2
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 3 CHIP 600V WAFER
- Stock
- 48,735
- In Stock ：
- 48,735
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Elements :
- 1
- Published :
- 2016
- Terminal Position :
- UPPER
- Lead Free :
- Lead Free
- Input Type :
- Standard
- Current - Collector (Ic) (Max) :
- 20A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- Die
- ECCN Code :
- EAR99
- Test Condition :
- 400V, 20A, 2.2 Ω, 15V
- Number of Terminations :
- 2
- Vce(on) (Max) @ Vge, Ic :
- 3.15V @ 15V, 20A
- Turn Off Time-Nom (toff) :
- 100 ns
- Terminal Form :
- NO LEAD
- Td (on/off) @ 25°C :
- 15ns/65ns
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 600V
- Turn On Time :
- 23.5 ns
- JESD-30 Code :
- R-XUUC-N2
- Collector Emitter Voltage (VCEO) :
- 600V
- Current - Collector Pulsed (Icm) :
- 60A
- Configuration :
- Single
- Pin Count :
- 2
- Transistor Application :
- POWER CONTROL
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- IGBT Type :
- NPT
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SIGC18T60UNX1SA2
SIGC18T60UNX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SIGC18T60UNX1SA2 Description
SIGC18T60UNX1SA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC18T60UNX1SA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
SIGC18T60UNX1SA2 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC18T60UNX1SA2 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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