SIGC15T60EX1SA1
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- Mfr.Part #
- SIGC15T60EX1SA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 3 CHIP 600V 30A WAFER
- Stock
- 24,650
- In Stock ：
- 24,650
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Package / Case :
- Die
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- IGBT Type :
- Trench Field Stop
- Operating Temperature :
- -40°C~175°C TJ
- Current - Collector Pulsed (Icm) :
- 90A
- Series :
- TRENCHSTOP™
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Pbfree Code :
- No
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 30A
- Gate-Emitter Voltage-Max :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2010
- Polarity/Channel Type :
- N-Channel
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 30A
- Datasheets
- SIGC15T60EX1SA1
SIGC15T60EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SIGC15T60EX1SA1 Description
SIGC15T60EX1SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
SIGC15T60EX1SA1 Features
Low turn-out losses
Short tail current
Positive temperature coefficient
Easy paralleling
SIGC15T60EX1SA1 Applications
Drives
White goods
Resonant applications
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