SIGC12T60NCX1SA5

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Mfr.Part #
SIGC12T60NCX1SA5
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT 3 CHIP 600V WAFER
Stock
38,888
In Stock :
38,888

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Surface Mount :
yes
Package / Case :
Die
Td (on/off) @ 25°C :
21ns/110ns
ECCN Code :
EAR99
Test Condition :
300V, 10A, 27 Ω, 15V
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Pulsed (Icm) :
30A
Drain to Source Voltage (Vdss) :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
S-XUUC-N2
Mounting Type :
Surface Mount
Polarity/Channel Type :
N-Channel
Transistor Application :
POWER CONTROL
Number of Elements :
1
Input Type :
Standard
Turn Off Time-Nom (toff) :
135 ns
Lead Free :
Lead Free
Published :
2016
Current - Collector (Ic) (Max) :
10A
Number of Terminations :
2
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 10A
Transistor Element Material :
SILICON
Terminal Position :
UPPER
Pin Count :
2
Pbfree Code :
No
Collector Emitter Voltage (VCEO) :
600V
Turn On Time :
29 ns
Max Dual Supply Voltage :
600V
Configuration :
Single
IGBT Type :
NPT
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Halogen Free :
Halogen Free
Terminal Form :
NO LEAD
Datasheets
SIGC12T60NCX1SA5
Introducing Transistors - IGBTs - Single Infineon Technologies SIGC12T60NCX1SA5 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Die, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, SIGC12T60NCX1SA5 pinout, SIGC12T60NCX1SA5 datasheet PDF, SIGC12T60NCX1SA5 amp .Beyond Transistors - IGBTs - Single Infineon Technologies SIGC12T60NCX1SA5 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SIGC12T60NCX1SA5


SIGC12T60NCX1SA5 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

SIGC12T60NCX1SA5 Description


The SIGC12T60NCX1SA5 is an IGBT Chip in NPT-technology. BJT and MOSFET are combined to create the IGBT, also known as Insulated Gate Bipolar Transistor. Additionally, the name suggests that they have fused together. Input MOSFETs typically have very high input impedances, which is referred to as an "insulated gate." It relies on the voltage at its gate terminal rather than requiring any input current to function. The term "bipolar" designates a BJT output component that is bipolar in character, meaning that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high current and voltage levels while just requiring little voltage. The IGBT is a voltage-controlled component thanks to this hybrid configuration.



SIGC12T60NCX1SA5 Features


  • Positive temperature coefficient

  • Easy paralleling

  • 600V NPT technology

  • 100μm chip

  • Low ON-state resistance



SIGC12T60NCX1SA5 Applications


  • Drives

  • Switched Mode Power Supply

  • Uninterruptible Power Supply

  • AC and DC motor drives

  • Solar inverters


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