SIGC11T60SNCX1SA2
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- Mfr.Part #
- SIGC11T60SNCX1SA2
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 3 CHIP 600V WAFER
- Stock
- 24,035
- In Stock ：
- 24,035
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Mounting Type :
- Surface Mount
- IGBT Type :
- NPT
- Td (on/off) @ 25°C :
- 28ns/198ns
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 10A
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- Die
- Current - Collector (Ic) (Max) :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Input Type :
- Standard
- Test Condition :
- 400V, 10A, 25Ohm, 15V
- Package / Case :
- Die
- Current - Collector Pulsed (Icm) :
- 30A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- SIGC11T60SNCX1SA2
SIGC11T60SNCX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SIGC11T60SNCX1SA2 Description
The SIGC11T60SNCX1SA2 is an IGBT Chip in NPT-technology. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
SIGC11T60SNCX1SA2 Features
-
Positive temperature coefficient
-
Easy paralleling
-
600V NPT technology
-
100μm chip
-
High input impedance
SIGC11T60SNCX1SA2 Applications
-
Drives
-
Chopper and inverters
-
Solar inverters
-
AC and DC motor drives
-
Switched Mode Power Supply
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