SIGC11T60NCX1SA2
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- Mfr.Part #
- SIGC11T60NCX1SA2
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 3 CHIP 600V WAFER
- Stock
- 1,012
- In Stock ：
- 1,012
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Terminal Form :
- NO LEAD
- Turn On Time :
- 28 ns
- Package / Case :
- Die
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Configuration :
- Single
- Td (on/off) @ 25°C :
- 20ns/110ns
- Collector Emitter Voltage (VCEO) :
- 600V
- Max Dual Supply Voltage :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Test Condition :
- 300V, 10A, 27 Ω, 15V
- IGBT Type :
- NPT
- Current - Collector (Ic) (Max) :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- UPPER
- Halogen Free :
- Halogen Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Input Type :
- Standard
- Turn Off Time-Nom (toff) :
- 130 ns
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Transistor Application :
- POWER CONTROL
- Pin Count :
- 2
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Current - Collector Pulsed (Icm) :
- 30A
- Published :
- 2016
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 10A
- JESD-30 Code :
- S-XUUC-N2
- Datasheets
- SIGC11T60NCX1SA2
SIGC11T60NCX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SIGC11T60NCX1SA2 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
SIGC11T60NCX1SA2 Applications
? Industrial Motor Drive
? UPS
? Solar Inverters
? Welding
SIGC11T60NCX1SA2 Features
High speed H5 technology offering
*Ultra low loss switching thanks to Kelvin emitter pin in combination with TRENCHSTOPM 5
*Best-in-class efficiency in hard switching and resonant topologies
·Plug and play replacement of previous generation IGBTs650V breakdown voltage Low gate charge QG
·IGBT copacked with RAPID 1 fast and soft antiparallel diode Maximum junction temperature175°C
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