SIGC08T60EX1SA1

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Mfr.Part #
SIGC08T60EX1SA1
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT CHIP
Stock
14,352
In Stock :
14,352

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Lead Free :
Lead Free
IGBT Type :
Trench Field Stop
Number of Terminations :
2
Collector Emitter Voltage (VCEO) :
600V
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Surface Mount :
yes
Halogen Free :
Halogen Free
Number of Elements :
1
Drain to Source Voltage (Vdss) :
600V
Input Type :
Standard
Vce(on) (Max) @ Vge, Ic :
1.9V @ 15V, 15A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
POWER CONTROL
JESD-30 Code :
R-XUUC-N2
Configuration :
Single
Current - Collector Pulsed (Icm) :
45A
Transistor Element Material :
SILICON
Terminal Form :
NO LEAD
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2010
Series :
TRENCHSTOP™
Max Dual Supply Voltage :
600V
Polarity/Channel Type :
N-Channel
Current - Collector (Ic) (Max) :
15A
RoHS Status :
ROHS3 Compliant
Terminal Position :
UPPER
Operating Temperature :
-40°C~175°C TJ
Package / Case :
Die
Datasheets
SIGC08T60EX1SA1
Introducing Transistors - IGBTs - Single Infineon Technologies SIGC08T60EX1SA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-40°C~175°C TJ, Package / Case:Die, SIGC08T60EX1SA1 pinout, SIGC08T60EX1SA1 datasheet PDF, SIGC08T60EX1SA1 amp .Beyond Transistors - IGBTs - Single Infineon Technologies SIGC08T60EX1SA1 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SIGC08T60EX1SA1


SIGC08T60EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

SIGC08T60EX1SA1 Description


SIGC08T60EX1SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



SIGC08T60EX1SA1 Features


Low turn-out losses

Short tail current

Positive temperature coefficient

Easy paralleling



SIGC08T60EX1SA1 Applications


Drives

White goods

Resonant applications


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