SI8902EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

FET Type :

2 N-Channel (Dual) Common Drain

Power Dissipation-Max (Abs) :

1.7W

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Power - Max :

1W

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

3.9A

Base Part Number :

SI8902

Vgs(th) (Max) @ Id :

1V @ 980μA

Mounting Type :

Surface Mount

Pin Count :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Number of Elements :

2

Series :

TrenchFET®

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Surface Mount :

yes

Drain-source On Resistance-Max :

0.072Ohm

Current - Continuous Drain (Id) @ 25°C :

3.9A

Additional Feature :

ESD PROTECTED, ULTRA-LOW RESISTANCE

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e1

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-XBGA-B6

Factory Lead Time :

24 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2012

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Ball

Package / Case :

6-MICRO FOOT®CSP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant