SI8901EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

-4.4A

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

60mOhm

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

60 mΩ

Gate to Source Voltage (Vgs) :

12V

FET Feature :

Logic Level Gate

Number of Elements :

2

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

SI8901

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Resistance :

60mOhm

Current - Continuous Drain (Id) @ 25°C :

3.5A

Mount :

Surface Mount

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Series :

TrenchFET®

Terminal Finish :

TIN SILVER COPPER

Rise Time :

2.2μs

Turn-Off Delay Time :

1.3 μs

Published :

2011

FET Type :

2 P-Channel (Dual) Common Drain

REACH SVHC :

No SVHC

Max Power Dissipation :

1W

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

2.3 μs

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

3.5A

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Package / Case :

6-MICRO FOOT®CSP

Power Dissipation :

1.7W

Number of Pins :

6

Transistor Element Material :

SILICON

Threshold Voltage :

-450mV

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Ball

Vgs(th) (Max) @ Id :

1V @ 350μA

Element Configuration :

Dual

Fall Time (Typ) :

2.2 μs

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Pin Count :

6