SI4330DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

6.6A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

12 ns

Resistance :

16.5mOhm

Max Power Dissipation :

1.1W

Continuous Drain Current (ID) :

8.7A

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Pin Count :

8

Turn-Off Delay Time :

40 ns

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 8.7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

MATTE TIN

Number of Elements :

2

Rise Time :

10ns

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Mount :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

6.6A

Base Part Number :

SI4330

Power Dissipation :

1.1W

Published :

2016

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing