SI4310BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

14-SOIC (0.154, 3.90mm Width)

Element Configuration :

Dual

Power - Max :

1.14W 1.47W

Length :

5mm

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

53 ns

Fall Time (Typ) :

12 ns

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 15V

Width :

4mm

Drain to Source Resistance :

8.5mOhm

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Published :

2016

Max Power Dissipation :

1.47W

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

30V

Series :

TrenchFET®

Weight :

186.993455mg

Current - Continuous Drain (Id) @ 25°C :

7.5A 9.8A

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

11mOhm @ 10A, 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

9.8A

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

14-SOIC

Height :

1.55mm

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Input Capacitance :

2.37nF

Rds On Max :

11 mΩ

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Turn On Delay Time :

17 ns

Number of Pins :

8

Number of Elements :

2