SH8KA1GZETB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

80m Ω @ 4.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

12A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 15V

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G8

Avalanche Energy Rating (Eas) :

1.1 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Power - Max :

2W Ta

Operating Temperature :

150°C TJ

FET Feature :

Standard

Drain-source On Resistance-Max :

0.08Ohm

Surface Mount :

yes

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)