SCT3120ALGC11
- Mfr.Part #
- SCT3120ALGC11
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 650V 21A TO247N
- Stock
- 35,596
- In Stock :
- 35,596
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 103W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 500V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Number of Terminations :
- 3
- Power Dissipation :
- 103W
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 650V
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5.6V @ 3.33mA
- FET Type :
- N-Channel
- Turn On Delay Time :
- 14 ns
- Pulsed Drain Current-Max (IDM) :
- 52A
- Max Junction Temperature (Tj) :
- 175°C
- Number of Channels :
- 1
- Height :
- 25.5mm
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Package / Case :
- TO-247-3
- Vgs (Max) :
- +22V, -4V
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 23 ns
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 156m Ω @ 6.7A, 18V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 30 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 21A
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 18V
- Datasheets
- SCT3120ALGC11

N-Channel Tube 156m Ω @ 6.7A, 18V +22V, -4V 460pF @ 500V 38nC @ 18V TO-247-3
SCT3120ALGC11 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 460pF @ 500V.This device conducts a continuous drain current (ID) of 21A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 52A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.In order to reduce power consumption, this device uses a drive voltage of 18V volts (18V).
SCT3120ALGC11 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 52A.
SCT3120ALGC11 Applications
There are a lot of ROHM Semiconductor
SCT3120ALGC11 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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