SCT3120ALGC11

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Mfr.Part #
SCT3120ALGC11
Manufacturer
ROHM Semiconductor
Package / Case
TO-247-3
Datasheet
Download
Description
SICFET N-CH 650V 21A TO247N
Stock
35,596
In Stock :
35,596

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Transistor Application :
SWITCHING
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
103W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
175°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 500V
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Number of Terminations :
3
Power Dissipation :
103W
Pbfree Code :
yes
Reach Compliance Code :
not_compliant
Drain to Source Breakdown Voltage :
650V
Packaging :
Tube
Vgs(th) (Max) @ Id :
5.6V @ 3.33mA
FET Type :
N-Channel
Turn On Delay Time :
14 ns
Pulsed Drain Current-Max (IDM) :
52A
Max Junction Temperature (Tj) :
175°C
Number of Channels :
1
Height :
25.5mm
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Package / Case :
TO-247-3
Vgs (Max) :
+22V, -4V
Drive Voltage (Max Rds On,Min Rds On) :
18V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
23 ns
Mount :
Through Hole
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
156m Ω @ 6.7A, 18V
Mounting Type :
Through Hole
Factory Lead Time :
30 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
21A
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 18V
Datasheets
SCT3120ALGC11
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor SCT3120ALGC11 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:175°C TJ, Number of Terminations:3, Number of Channels:1, Package / Case:TO-247-3, Mounting Type:Through Hole, SCT3120ALGC11 pinout, SCT3120ALGC11 datasheet PDF, SCT3120ALGC11 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor SCT3120ALGC11 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor SCT3120ALGC11


N-Channel Tube 156m Ω @ 6.7A, 18V +22V, -4V 460pF @ 500V 38nC @ 18V TO-247-3

SCT3120ALGC11 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 460pF @ 500V.This device conducts a continuous drain current (ID) of 21A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 52A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.In order to reduce power consumption, this device uses a drive voltage of 18V volts (18V).

SCT3120ALGC11 Features


a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 52A.


SCT3120ALGC11 Applications


There are a lot of ROHM Semiconductor
SCT3120ALGC11 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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