SCT3105KRC14
- Mfr.Part #
- SCT3105KRC14
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 24A TO247-4L
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 134W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 24A
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 18V
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- +22V, -4V
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 1200V
- JESD-30 Code :
- R-PSFM-T4
- Drain-source On Resistance-Max :
- 0.137Ohm
- Operating Temperature :
- 175°C TJ
- Drain to Source Voltage (Vdss) :
- 1200V
- Terminal Position :
- Single
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 60A
- Vgs(th) (Max) @ Id :
- 5.6V @ 3.81mA
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 574pF @ 800V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Rds On (Max) @ Id, Vgs :
- 137m Ω @ 7.6A, 18V
- Package / Case :
- TO-247-4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- SCT3105KRC14

N-Channel Tube 137m Ω @ 7.6A, 18V +22V, -4V 574pF @ 800V 51nC @ 18V 1200V TO-247-4
SCT3105KRC14 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 574pF @ 800V.The drain current is the maximum continuous current this device can conduct, which is 24A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 1200V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 18V volts (18V).
SCT3105KRC14 Features
based on its rated peak drain current 60A.
a 1200V drain to source voltage (Vdss)
SCT3105KRC14 Applications
There are a lot of ROHM Semiconductor
SCT3105KRC14 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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