SCT3080ALGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

571pF @ 500V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5.6V @ 5mA

Transistor Element Material :

Silicon Carbide

Drain-source On Resistance-Max :

0.104Ohm

Drain Current-Max (Abs) (ID) :

30A

Vgs (Max) :

+22V, -4V

DS Breakdown Voltage-Min :

650V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 18V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Rds On (Max) @ Id, Vgs :

104m Ω @ 10A, 18V

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Number of Elements :

1

Factory Lead Time :

21 Weeks

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

134W Tc

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

18V

Drain to Source Voltage (Vdss) :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

175°C TJ

Surface Mount :

No

Pbfree Code :

yes

FET Type :

N-Channel