SCT3060ALGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Height :

25.5mm

Number of Channels :

1

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 18V

Drain to Source Breakdown Voltage :

650V

Rds On (Max) @ Id, Vgs :

78m Ω @ 13A, 18V

Packaging :

Tube

Published :

2016

Factory Lead Time :

21 Weeks

Turn On Delay Time :

19 ns

JESD-609 Code :

e3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.078Ohm

Number of Terminations :

3

Turn-Off Delay Time :

34 ns

Power Dissipation-Max :

165W Tc

Max Junction Temperature (Tj) :

175°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds :

852pF @ 500V

Transistor Application :

SWITCHING

Operating Temperature :

175°C TJ

Continuous Drain Current (ID) :

39A

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Terminal Finish :

Tin (Sn)

Power Dissipation :

165W

Lead Free :

Lead Free

Threshold Voltage :

2.7V

Vgs(th) (Max) @ Id :

5.6V @ 6.67mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

18V

Pulsed Drain Current-Max (IDM) :

97A

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)