SCH2080KEC
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- Mfr.Part #
- SCH2080KEC
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 40A TO247
- Stock
- 14
- In Stock ：
- 14
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 80A
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Factory Lead Time :
- 19 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 4.4mA
- Rds On (Max) @ Id, Vgs :
- 117m Ω @ 10A, 18V
- Gate Charge (Qg) (Max) @ Vgs :
- 106nC @ 18V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Height :
- 25.83mm
- Power Dissipation-Max :
- 262W Tc
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Output Current :
- 2A
- Nominal Vgs :
- 4 V
- Power Dissipation :
- 262W
- Interface :
- On/Off
- REACH SVHC :
- Unknown
- Packaging :
- Tube
- Turn On Delay Time :
- 37 ns
- Number of Elements :
- 1
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 70 ns
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 28 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Output Configuration :
- High Side
- Max Junction Temperature (Tj) :
- 175°C
- Vgs (Max) :
- +22V, -6V
- Published :
- 2012
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 40A
- Width :
- 20.95mm
- Length :
- 15.9mm
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C TJ
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 1200V
- Threshold Voltage :
- 2.8V
- Drain to Source Breakdown Voltage :
- 1.2kV
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 22V
- Rise Time :
- 33ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1850pF @ 800V
- Datasheets
- SCH2080KEC
SCH2080KEC Documents
N-Channel Tube 117m Ω @ 10A, 18V +22V, -6V 1850pF @ 800V 106nC @ 18V 1200V TO-247-3
SCH2080KEC Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1850pF @ 800V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1.2kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1.2kV.As a result of its turn-off delay time, which is 70 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 37 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 22VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.8V.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (18V).
SCH2080KEC Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a threshold voltage of 2.8V
a 1200V drain to source voltage (Vdss)
SCH2080KEC Applications
There are a lot of ROHM Semiconductor
SCH2080KEC applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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