SBCW66GLT1G

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Mfr.Part #
SBCW66GLT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.8A SOT23-3
Stock
826
In Stock :
826

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Published :
2011
Current - Collector Cutoff (Max) :
20nA
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Surface Mount :
yes
ECCN Code :
EAR99
Lead Free :
Lead Free
Pin Count :
3
Mounting Type :
Surface Mount
Series :
Automotive, AEC-Q101
Max Collector Current :
800mA
Collector Emitter Breakdown Voltage :
45V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
300mW
Number of Pins :
3
Pbfree Code :
yes
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Collector Emitter Voltage (VCEO) :
700mV
Transistor Type :
NPN
Transition Frequency :
100MHz
Factory Lead Time :
4 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Configuration :
Single
JESD-609 Code :
e3
Base Part Number :
BCW66
Frequency - Transition :
100MHz
Collector Base Voltage (VCBO) :
75V
Max Power Dissipation :
300mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Datasheets
SBCW66GLT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SBCW66GLT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Base Part Number:BCW66, SBCW66GLT1G pinout, SBCW66GLT1G datasheet PDF, SBCW66GLT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SBCW66GLT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBCW66GLT1G


NPN -55°C~150°C TJ 20nA NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SBCW66GLT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 800mA volts at its maximum.

SBCW66GLT1G Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz


SBCW66GLT1G Applications


There are a lot of ON Semiconductor
SBCW66GLT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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