SBCW72LT1G
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- Mfr.Part #
- SBCW72LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Transition Frequency :
- 300MHz
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Surface Mount :
- yes
- Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Max Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Base Part Number :
- BCW72
- Pbfree Code :
- yes
- Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Datasheets
- SBCW72LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBCW72LT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 500μA, 10mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
SBCW72LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
SBCW72LT1G Applications
There are a lot of ON Semiconductor
SBCW72LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| SBCW30LT1G | onsemi | 4,003 | TRANS PNP 32V 0.1A SOT23-3 |
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| SBCW66GLT1G | onsemi | 826 | TRANS NPN 45V 0.8A SOT23-3 |
| SBCW72LT1 | onsemi | 19,165 | TRANS NPN 45V 0.1A SOT23-3 |
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