S29GL512T11FAIV23

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Format :

Flash

Width :

11mm

Terminal Pitch :

1mm

Series :

GL-T

Operating Temperature :

-40°C~85°C TA

Programming Voltage :

2.7V

Memory Type :

Non-Volatile

Memory Size :

512Mb 64M x 8

Memory Density :

536870912 bit

Packaging :

Tape and Reel (TR)

Organization :

32MX16

Alternate Memory Width :

8

Terminal Position :

BOTTOM

RoHS Status :

Non-RoHS Compliant

Voltage - Supply :

1.65V~3.6V

HTS Code :

8542.32.00.51

Access Time :

110ns

Package / Case :

64-LBGA

Write Cycle Time - Word, Page :

60ns

Factory Lead Time :

13 Weeks

Memory Interface :

Parallel

Surface Mount :

yes

Supply Voltage :

3V

Height Seated (Max) :

1.4mm

Length :

13mm

Supply Voltage-Max (Vsup) :

3.6V

Number of Terminations :

64

Number of Functions :

1

Memory Width :

16

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Min (Vsup) :

2.7V

Operating Mode :

ASYNCHRONOUS

JESD-30 Code :

R-PBGA-B64