S29GL01GP11TFIR20

Manufacturer :

Infineon Technologies

Product Category :

Memory

Common Flash Interface :

yes

Data Bus Width :

8B

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Number of Functions :

1

Supply Voltage-Min (Vsup) :

3V

JESD-609 Code :

e3

Page Size :

8/16words

Voltage - Supply :

3V~3.6V

Operating Temperature :

-40°C~85°C TA

Terminal Position :

Dual

Mount :

Surface Mount

Density :

1 Gb

Ready/Busy :

yes

Contact Plating :

Tin

Memory Interface :

Parallel

Nominal Supply Current :

110mA

Height Seated (Max) :

1.2mm

Number of Terminations :

56

HTS Code :

8542.32.00.51

Supply Voltage-Max (Vsup) :

3.6V

Published :

2007

Memory Format :

Flash

Command User Interface :

yes

RoHS Status :

ROHS3 Compliant

Write Cycle Time - Word, Page :

110ns

Power Supplies :

3.3V

Lead Free :

Lead Free

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Organization :

1GX1

Access Time (Max) :

110 ns

Number of Pins :

56

Supply Voltage :

3.3V

Sector Size :

128K

Memory Width :

1

Data Polling :

yes

Memory Type :

Non-Volatile

Toggle Bit :

yes

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Sync/Async :

ASYNCHRONOUS

ECCN Code :

3A991.B.1.A

REACH SVHC :

No SVHC

Number of Sectors/Size :

1k

Mounting Type :

Surface Mount

Programming Voltage :

3V

Series :

GL-P

Memory Size :

1Gb 128M x 8

Packaging :

Tray

Length :

18.4mm

Terminal Pitch :

0.5mm

Standby Current-Max :

0.000005A

Alternate Memory Width :

8