S29GL01GP11TFCR10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Operating Supply Voltage :

3.3V

Command User Interface :

yes

Height Seated (Max) :

1.2mm

Published :

2012

Memory Type :

Non-Volatile

Supply Voltage-Min (Vsup) :

3V

Organization :

1GX1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Common Flash Interface :

yes

Terminal Pitch :

0.5mm

Toggle Bit :

yes

Number of Sectors/Size :

1k

ECCN Code :

3A991.B.1.A

Programming Voltage :

3V

Access Time (Max) :

110 ns

RoHS Status :

ROHS3 Compliant

Ready/Busy :

yes

Supply Voltage-Max (Vsup) :

3.6V

Density :

1 Gb

Mounting Type :

Surface Mount

Voltage - Supply :

3V~3.6V

Standby Current-Max :

0.000005A

Number of Functions :

1

Memory Width :

1

Mount :

Surface Mount

Contact Plating :

Tin

Page Size :

8/16words

Peak Reflow Temperature (Cel) :

260

Series :

GL-P

Time@Peak Reflow Temperature-Max (s) :

40

Sector Size :

128K

JESD-609 Code :

e3

Supply Voltage :

3.3V

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Data Bus Width :

8B

Number of Terminations :

56

Packaging :

Tray

Data Polling :

yes

Write Cycle Time - Word, Page :

110ns

Alternate Memory Width :

8

Sync/Async :

ASYNCHRONOUS

Nominal Supply Current :

110mA

Memory Interface :

Parallel

HTS Code :

8542.32.00.51

Memory Size :

1Gb 128M x 8

Memory Format :

Flash

Terminal Position :

Dual

Number of Pins :

56

Operating Temperature :

0°C~85°C TA

Radiation Hardening :

No

Length :

18.4mm