S29GL01GP11FFCR10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Operating Temperature :

0°C~85°C TA

Number of Pins :

64

Command User Interface :

yes

Density :

1 Gb

Toggle Bit :

yes

Height Seated (Max) :

1.4mm

Mounting Type :

Surface Mount

Memory Interface :

Parallel

Memory Type :

Non-Volatile

Nominal Supply Current :

110mA

Write Cycle Time - Word, Page :

110ns

RoHS Status :

ROHS3 Compliant

Programming Voltage :

3V

Page Size :

8/16words

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Organization :

1GX1

Access Time (Max) :

110 ns

Standby Current-Max :

0.000005A

Ready/Busy :

yes

Radiation Hardening :

No

Alternate Memory Width :

8

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2012

Voltage - Supply :

3V~3.6V

Terminal Position :

BOTTOM

Number of Terminations :

64

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

Flash

Series :

GL-P

Data Bus Width :

8B

Supply Voltage-Min (Vsup) :

3V

Memory Size :

1Gb 128M x 8

Sector Size :

128K

JESD-609 Code :

e1

Common Flash Interface :

yes

Terminal Pitch :

1mm

Supply Voltage-Max (Vsup) :

3.6V

Power Supplies :

3.3V

Sync/Async :

ASYNCHRONOUS

Contact Plating :

Copper, Silver, Tin

Number of Sectors/Size :

1k

Package / Case :

64-LBGA

Length :

13mm

Data Polling :

yes

Memory Width :

1

Number of Functions :

1

Packaging :

Tray

Supply Voltage :

3.3V

HTS Code :

8542.32.00.51

ECCN Code :

3A991.B.1.A

REACH SVHC :

No SVHC

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)