S29GL512S12TFIV10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Number of Sectors/Size :

512

Command User Interface :

yes

Access Time :

120ns

Memory Size :

512Mb 32M x 16

Organization :

64MX8

Radiation Hardening :

No

Number of Terminations :

56

Word Size :

16b

Terminal Position :

Dual

Mounting Type :

Surface Mount

Memory Width :

8

Standby Current-Max :

0.0001A

Write Cycle Time - Word, Page :

60ns

Terminal Pitch :

0.5mm

HTS Code :

8542.32.00.51

Length :

18.4mm

Power Supplies :

3/3.3V

Nominal Supply Current :

60mA

Memory Type :

Non-Volatile

Supply Voltage-Max (Vsup) :

3.6V

Series :

GL-S

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

RoHS Status :

ROHS3 Compliant

Memory Format :

Flash

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

56

Address Bus Width :

25b

ECCN Code :

3A991.B.1.A

Number of Functions :

1

Toggle Bit :

yes

Memory Interface :

Parallel

Density :

512 Mb

Voltage - Supply :

1.65V~3.6V

Mount :

Surface Mount

Ready/Busy :

yes

Published :

2015

Programming Voltage :

2.7V

Height Seated (Max) :

1.2mm

Packaging :

Tray

Common Flash Interface :

yes

Supply Voltage-Min (Vsup) :

2.7V

Data Polling :

yes

Supply Voltage :

3V

Page Size :

32b

Sector Size :

64K

Factory Lead Time :

13 Weeks

Sync/Async :

ASYNCHRONOUS

Operating Temperature :

-40°C~85°C TA

Data Bus Width :

16b