S29GL512S10TFA010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Memory Width :

8

Terminal Position :

Dual

Supply Voltage-Max (Vsup) :

3.6V

Memory Interface :

Parallel

Memory Size :

512Mb 32M x 16

HTS Code :

8542.32.00.51

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

14mm

Number of Functions :

1

Screening Level :

AEC-Q100

Number of Terminations :

56

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Organization :

64MX8

Memory Format :

Flash

Memory Type :

Non-Volatile

Programming Voltage :

3V

Access Time :

100ns

Height Seated (Max) :

1.2mm

Length :

18.4mm

Factory Lead Time :

13 Weeks

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Min (Vsup) :

2.7V

RoHS Status :

ROHS3 Compliant

Voltage - Supply :

2.7V~3.6V

Write Cycle Time - Word, Page :

60ns

Series :

GL-S

Packaging :

Tray

Mounting Type :

Surface Mount

Memory Density :

536870912 bit

Terminal Pitch :

0.5mm

Supply Voltage :

3V

JESD-30 Code :

R-PDSO-G56

Operating Temperature :

-40°C~85°C TA

Operating Mode :

ASYNCHRONOUS