S29GL512S10FHI010
- Mfr.Part #
- S29GL512S10FHI010
- Manufacturer
- Infineon Technologies
- Package / Case
- 64-LBGA
- Datasheet
- Download
- Description
- IC FLASH 512MBIT PARALLEL 64BGA
- Stock
- 5,275
- In Stock :
- 5,275
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Voltage - Supply :
- 2.7V~3.6V
- Density :
- 512 Mb
- Boot Block :
- BOTTOM/TOP
- Standby Current-Max :
- 0.0001A
- Power Supplies :
- 3/3.3V
- Lead Free :
- Lead Free
- Height Seated (Max) :
- 1.4mm
- Supply Voltage-Min (Vsup) :
- 2.7V
- Package / Case :
- 64-LBGA
- Address Bus Width :
- 25b
- Word Size :
- 16b
- HTS Code :
- 8542.32.00.51
- Programming Voltage :
- 3V
- Common Flash Interface :
- yes
- Ready/Busy :
- yes
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Functions :
- 1
- Series :
- GL-S
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Memory Type :
- Non-Volatile
- Number of Terminations :
- 64
- Supply Voltage-Max (Vsup) :
- 3.6V
- Number of Sectors/Size :
- 512
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 13 Weeks
- Sync/Async :
- ASYNCHRONOUS
- Page Size :
- 32b
- Published :
- 2012
- Nominal Supply Current :
- 60mA
- Mount :
- Surface Mount
- Operating Temperature :
- -40°C~85°C TA
- Memory Size :
- 512Mb 32M x 16
- Data Bus Width :
- 16b
- Access Time :
- 100ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Write Cycle Time - Word, Page :
- 60ns
- Peak Reflow Temperature (Cel) :
- 260
- Memory Format :
- Flash
- Memory Width :
- 8
- Data Polling :
- yes
- Packaging :
- Tray
- Sector Size :
- 64K
- Command User Interface :
- yes
- Mounting Type :
- Surface Mount
- ECCN Code :
- 3A991.B.1.A
- Radiation Hardening :
- No
- Supply Voltage :
- 3V
- Terminal Pitch :
- 1mm
- Number of Pins :
- 64
- Memory Interface :
- Parallel
- Toggle Bit :
- yes
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e1
- Length :
- 13mm
- Datasheets
- S29GL512S10FHI010

Memory Infineon Technologies S29GL512S10FHI010 Overview
Introducing the Memory Infineon Technologies S29GL512S10FHI010, a high-performance IC FLASH device boasting a substantial 512Mbit storage capacity. Designed by Infineon Technologies, a leader in semiconductor solutions, this IC FLASH utilizes a parallel interface housed in a compact 64-BGA package. Its robust design ensures reliability and high-speed performance, making it an essential component for applications requiring large-scale, non-volatile memory storage. The Memory Infineon Technologies S29GL512S10FHI010 is engineered to meet the rigorous demands of modern electronic devices, providing both versatility and efficiency in handling complex data storage requirements.
S29GL512S10FHI010 Features
- 512Mbit storage capacity for extensive data management.
- Parallel interface ensures rapid data access and processing.
- Encased in a 64-ball grid array (BGA) package for optimal space utilization and reliability.
- Designed to operate efficiently under a broad range of environmental conditions.
- Offers endurance and reliability, suited for high-intensity memory operations.
S29GL512S10FHI010 Applications
- Automotive Systems: Utilized in car infotainment and navigation systems to store firmware and media content.
- Telecommunications: Integral for storing firmware and configuration data in routers and switches.
- Consumer Electronics: Ideal for use in digital cameras, video recorders, and gaming consoles where large and fast memory is essential.
- Industrial Applications: Supports complex machinery and equipment in storing operational codes and user settings.
- Medical Devices: Used in medical imaging systems to handle large volumes of data securely and efficiently.
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