S29GL512P11TFIV20

Manufacturer :

Infineon Technologies

Product Category :

Memory

Programming Voltage :

3V

ECCN Code :

3A991.B.1.A

Length :

18.4mm

Common Flash Interface :

yes

Organization :

512MX1

Supply Current-Max :

0.11mA

Number of Terminations :

56

JESD-609 Code :

e3

Number of Functions :

1

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Ready/Busy :

yes

Power Supplies :

1.8/3.33/3.3V

Memory Size :

512Mb 32M x 16

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-G56

Standby Current-Max :

0.000005A

Supply Voltage-Min (Vsup) :

2.7V

Memory Type :

Non-Volatile

Mounting Type :

Surface Mount

Terminal Position :

Dual

Supply Voltage-Max (Vsup) :

3.6V

Toggle Bit :

yes

Page Size :

8/16words

Packaging :

Tray

Published :

2015

Access Time (Max) :

110 ns

Sector Size :

128K

Operating Temperature :

-40°C~85°C TA

Write Cycle Time - Word, Page :

110ns

Memory Format :

Flash

Supply Voltage :

3V

Number of Sectors/Size :

512

Memory Interface :

Parallel

Data Polling :

yes

Height Seated (Max) :

1.2mm

Memory Width :

1

Terminal Pitch :

0.5mm

Command User Interface :

yes

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Density :

512 Mb

Voltage - Supply :

1.65V~3.6V

Width :

14mm

Series :

GL-P

Peak Reflow Temperature (Cel) :

260

HTS Code :

8542.32.00.51

Alternate Memory Width :

8

Radiation Hardening :

No