S29GL512P11TFIV10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

3A991.B.1.A

Standby Current-Max :

0.000005A

Number of Terminations :

56

Ready/Busy :

yes

Memory Interface :

Parallel

Data Polling :

yes

Memory Width :

1

Qualification Status :

Not Qualified

Length :

18.4mm

Write Cycle Time - Word, Page :

110ns

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Voltage - Supply :

1.65V~3.6V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Supply Current-Max :

0.11mA

Operating Mode :

ASYNCHRONOUS

Command User Interface :

yes

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G56

Page Size :

8/16words

Memory Density :

536870912 bit

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Min (Vsup) :

2.7V

Operating Temperature :

-40°C~85°C TA

Number of Sectors/Size :

512

Memory Type :

Non-Volatile

Terminal Pitch :

0.5mm

Series :

GL-P

Toggle Bit :

yes

Terminal Position :

Dual

Published :

2015

Packaging :

Tray

Programming Voltage :

3V

Common Flash Interface :

yes

Organization :

512MX1

Alternate Memory Width :

8

Memory Size :

512Mb 32M x 16

Power Supplies :

1.8/3.33/3.3V

Supply Voltage :

3V

Memory Format :

Flash

HTS Code :

8542.32.00.51

RoHS Status :

ROHS3 Compliant

Sector Size :

128K

Supply Voltage-Max (Vsup) :

3.6V

Mounting Type :

Surface Mount

Access Time (Max) :

110 ns

Number of Functions :

1

Width :

14mm

Height Seated (Max) :

1.2mm