S29GL512P11FAI012
- Mfr.Part #
- S29GL512P11FAI012
- Manufacturer
- Infineon Technologies
- Package / Case
- 64-LBGA
- Datasheet
- Download
- Description
- IC FLASH 512MBIT PARALLEL 64BGA
- Stock
- 23,344
- In Stock :
- 23,344
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Series :
- GL-P
- Memory Interface :
- Parallel
- Packaging :
- Tape and Reel (TR)
- Organization :
- 512MX1
- Voltage - Supply :
- 2.7V~3.6V
- Terminal Pitch :
- 1mm
- Alternate Memory Width :
- 8
- Toggle Bit :
- yes
- Package / Case :
- 64-LBGA
- Published :
- 2015
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage :
- 3V
- Memory Width :
- 1
- Memory Size :
- 512Mb 32M x 16
- Terminal Position :
- BOTTOM
- Supply Current-Max :
- 0.11mA
- Length :
- 13mm
- Number of Terminations :
- 64
- Memory Format :
- Flash
- Page Size :
- 8/16words
- Command User Interface :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Ready/Busy :
- yes
- Standby Current-Max :
- 0.000005A
- Power Supplies :
- 3/3.3V
- Data Polling :
- yes
- Write Cycle Time - Word, Page :
- 110ns
- Supply Voltage-Max (Vsup) :
- 3.6V
- Access Time (Max) :
- 110 ns
- Mounting Type :
- Surface Mount
- Common Flash Interface :
- yes
- Operating Temperature :
- -40°C~85°C TA
- Height Seated (Max) :
- 1.4mm
- Memory Type :
- Non-Volatile
- Number of Pins :
- 64
- Peak Reflow Temperature (Cel) :
- 240
- Radiation Hardening :
- No
- Sector Size :
- 128K
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- ROHS3 Compliant
- Programming Voltage :
- 3V
- Supply Voltage-Min (Vsup) :
- 2.7V
- Width :
- 11mm
- Density :
- 512 Mb
- Number of Functions :
- 1
- JESD-609 Code :
- e0
- Surface Mount :
- yes
- ECCN Code :
- 3A991.B.1.A
- Number of Sectors/Size :
- 512
- HTS Code :
- 8542.32.00.51
- Datasheets
- S29GL512P11FAI012

Memory Infineon Technologies S29GL512P11FAI012 Overview
The Memory Infineon Technologies S29GL512P11FAI012 is a high-performance IC FLASH memory, designed to meet the rigorous demands of high-data storage and retrieval in complex digital environments. Engineered by Infineon Technologies, this flash memory device features a 512 Mbit capacity and utilizes a parallel interface encapsulated in a compact 64-ball grid array (BGA) package. Ideal for applications requiring high-speed, reliable data manipulation and storage, the Memory Infineon Technologies S29GL512P11FAI012 offers robust durability and advanced technology ensuring longevity and high performance in critical applications.
S29GL512P11FAI012 Features
The S29GL512P11FAI012 flash memory chip boasts numerous features that make it a top choice for developers and engineers. Key features include its 512 Mbit data storage capacity, a parallel interface for fast data access, and a standard 64-BGA package that ensures a minimal footprint on system boards. Furthermore, its operational reliability in extreme conditions and low power consumption make it an eco-friendly and cost-effective solution for widespread commercial and industrial applications.
S29GL512P11FAI012 Applications
- Consumer Electronics: Used in devices like digital cameras and gaming consoles where large, fast memory is crucial for user experience.
- Automotive Systems: Integrates into automotive infotainment systems, providing the necessary speed and reliability for advanced vehicle functionalities.
- Industrial Automation: Supports the complex computational needs of automated machinery in manufacturing environments, enhancing efficiency and reliability.
- Networking Equipment: Crucial for data buffering and high-speed processing in routers and network switches.
- Medical Devices: Applied in medical imaging systems where large amounts of data require rapid access and storage, ensuring swift patient diagnostics.
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