S29GL512P10FFI020

Manufacturer :

Infineon Technologies

Product Category :

Memory

Operating Temperature :

-40°C~85°C TA

Memory Format :

Flash

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

100ns

Alternate Memory Width :

8

Supply Voltage-Max (Vsup) :

3.6V

Memory Size :

512Mb 32M x 16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Surface Mount :

yes

Number of Terminations :

64

Common Flash Interface :

yes

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Package / Case :

64-LBGA

Standby Current-Max :

0.000005A

Programming Voltage :

3V

Memory Width :

1

Memory Density :

536870912 bit

Number of Sectors/Size :

512

Series :

GL-P

Data Polling :

yes

ECCN Code :

3A991.B.1.A

Length :

13mm

Organization :

512MX1

Packaging :

Tray

JESD-30 Code :

R-PBGA-B64

Terminal Position :

BOTTOM

Command User Interface :

yes

Sector Size :

128K

Memory Type :

Non-Volatile

HTS Code :

8542.32.00.51

Power Supplies :

3/3.3V

Number of Functions :

1

Supply Voltage-Min (Vsup) :

2.7V

Terminal Pitch :

1mm

Ready/Busy :

yes

Height Seated (Max) :

1.4mm

Toggle Bit :

yes

Access Time (Max) :

100 ns

Voltage - Supply :

2.7V~3.6V

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Supply Current-Max :

0.11mA

Page Size :

8/16words

Supply Voltage :

3V

JESD-609 Code :

e1

Published :

2015

Operating Mode :

ASYNCHRONOUS

Width :

11mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)