S29GL256S10TFB023

Manufacturer :

Infineon Technologies

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

Operating Mode :

ASYNCHRONOUS

Terminal Pitch :

0.5mm

Write Cycle Time - Word, Page :

60ns

Memory Width :

8

Voltage - Supply :

2.7V~3.6V

Terminal Position :

Dual

Number of Functions :

1

Organization :

32MX8

Series :

Automotive, AEC-Q100, GL-S

Memory Interface :

Parallel

Operating Temperature :

-40°C~105°C TA

Factory Lead Time :

13 Weeks

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Width :

14mm

Memory Size :

256Mb 16M x 16

JESD-30 Code :

R-PDSO-G56

Supply Voltage-Max (Vsup) :

3.6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Memory Density :

268435456 bit

HTS Code :

8542.32.00.51

Access Time :

100ns

Supply Voltage :

3V

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Programming Voltage :

3V

Height Seated (Max) :

1.2mm

Mounting Type :

Surface Mount

Memory Type :

Non-Volatile

Surface Mount :

yes

Length :

18.4mm

Supply Voltage-Min (Vsup) :

2.7V

Number of Terminations :

56

Memory Format :

Flash