S29GL256S10TFB010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Voltage - Supply :

2.7V~3.6V

Supply Voltage :

3V

Width :

14mm

Supply Voltage-Max (Vsup) :

3.6V

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Access Time :

100ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Memory Type :

Non-Volatile

Memory Format :

Flash

HTS Code :

8542.32.00.51

Height Seated (Max) :

1.2mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Width :

8

Write Cycle Time - Word, Page :

60ns

Series :

Automotive, AEC-Q100, GL-S

Memory Density :

268435456 bit

Operating Mode :

ASYNCHRONOUS

Memory Interface :

Parallel

JESD-30 Code :

R-PDSO-G56

Terminal Position :

Dual

Terminal Pitch :

0.5mm

Number of Terminations :

56

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Programming Voltage :

3V

Operating Temperature :

-40°C~105°C TA

Memory Size :

256Mb 16M x 16

Supply Voltage-Min (Vsup) :

2.7V

Factory Lead Time :

13 Weeks

Packaging :

Tray

Surface Mount :

yes

Length :

18.4mm

Organization :

32MX8