S29GL256P90FFIR23

Manufacturer :

Infineon Technologies

Product Category :

Memory

Command User Interface :

yes

RoHS Status :

ROHS3 Compliant

Ready/Busy :

yes

JESD-609 Code :

e1

Number of Sectors/Size :

256

Toggle Bit :

yes

Page Size :

8/16words

Peak Reflow Temperature (Cel) :

260

Memory Interface :

Parallel

Memory Type :

Non-Volatile

Data Polling :

yes

Mount :

Surface Mount

Density :

256 Mb

Mounting Type :

Surface Mount

ECCN Code :

3A991.B.1.A

Width :

11mm

Common Flash Interface :

yes

Published :

2003

Height Seated (Max) :

1.4mm

Supply Voltage :

3.3V

Write Cycle Time - Word, Page :

90ns

Nominal Supply Current :

110mA

Time@Peak Reflow Temperature-Max (s) :

40

Memory Width :

1

Supply Voltage-Min (Vsup) :

3V

Programming Voltage :

3V

Terminal Pitch :

1mm

HTS Code :

8542.32.00.51

Supply Voltage-Max (Vsup) :

3.6V

Radiation Hardening :

No

Memory Format :

Flash

Power Supplies :

3.3V

Organization :

256MX1

Access Time (Max) :

90 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Alternate Memory Width :

8

Voltage - Supply :

3V~3.6V

Sector Size :

128K

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Packaging :

Tape and Reel (TR)

Length :

13mm

Terminal Position :

BOTTOM

Number of Functions :

1

Operating Temperature :

-40°C~85°C TA

Memory Size :

256Mb 32M x 8

Standby Current-Max :

0.000005A

Number of Pins :

64

Series :

GL-P

Sync/Async :

ASYNCHRONOUS

Package / Case :

64-LBGA

Number of Terminations :

64