S29GL256P11TFIV13
- Mfr.Part #
- S29GL256P11TFIV13
- Manufacturer
- Infineon Technologies
- Package / Case
- 56-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 256MBIT PARALLEL 56TSOP
- Stock
- 26,525
- In Stock :
- 26,525
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Height Seated (Max) :
- 1.2mm
- JESD-30 Code :
- R-PDSO-G56
- Number of Functions :
- 1
- Command User Interface :
- yes
- Surface Mount :
- yes
- Memory Size :
- 256Mb 32M x 8
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Alternate Memory Width :
- 8
- Packaging :
- Tape and Reel (TR)
- Width :
- 14mm
- Mounting Type :
- Surface Mount
- Package / Case :
- 56-TFSOP (0.724, 18.40mm Width)
- Memory Interface :
- Parallel
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8542.32.00.51
- Page Size :
- 8/16words
- Supply Voltage-Max (Vsup) :
- 3.6V
- Series :
- GL-P
- Number of Terminations :
- 56
- Supply Voltage :
- 3V
- ECCN Code :
- 3A991.B.1.A
- Common Flash Interface :
- yes
- Programming Voltage :
- 3V
- Supply Voltage-Min (Vsup) :
- 2.7V
- Voltage - Supply :
- 1.65V~3.6V
- Length :
- 18.4mm
- Radiation Hardening :
- No
- Memory Format :
- Flash
- JESD-609 Code :
- e3
- Organization :
- 256MX1
- Toggle Bit :
- yes
- Data Polling :
- yes
- Operating Temperature :
- -40°C~85°C TA
- Terminal Pitch :
- 0.5mm
- Power Supplies :
- 1.8/3.33/3.3V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Standby Current-Max :
- 0.000005A
- Density :
- 256 Mb
- Number of Sectors/Size :
- 256
- Terminal Finish :
- Matte Tin (Sn)
- Write Cycle Time - Word, Page :
- 110ns
- Supply Current-Max :
- 0.11mA
- Ready/Busy :
- yes
- Access Time (Max) :
- 110 ns
- Memory Width :
- 1
- Memory Type :
- Non-Volatile
- Sector Size :
- 128K
- Datasheets
- S29GL256P11TFIV13

Memory Infineon Technologies S29GL256P11TFIV13 Overview
Introducing the Memory Infineon Technologies S29GL256P11TFIV13, a high-performance IC FLASH memory device engineered by Infineon Technologies. This component is designed to meet the rigorous demands of advanced digital storage applications. Featuring a robust 256Mbit capacity on a parallel interface, it is housed in a compact 56-pin TSOP package, making it ideal for space-constrained applications. The Memory Infineon Technologies S29GL256P11TFIV13 is optimized for reliability and speed, supporting a wide range of temperature and operational environments, making it an excellent choice for manufacturers seeking high-volume, dependable solutions.
S29GL256P11TFIV13 Features
This IC FLASH memory boasts several key features including a 256Mbit storage capacity which allows for substantial data management and storage capabilities. Its parallel interface ensures high-speed data transfer rates, essential for applications requiring quick read and write operations. The 56TSOP package is not only space-efficient but also offers enhanced thermal stability and durability under varied environmental conditions.
S29GL256P11TFIV13 Applications
- Automotive Systems: Utilized in car entertainment and navigation systems, the S29GL256P11TFIV13 provides reliable data storage, facilitating enhanced user interfaces and real-time system updates.
- Industrial Automation: In automation control systems, this memory device helps in logging extensive amounts of data and program instructions needed for complex automation tasks, enhancing process efficiency and reliability.
- Communication Equipment: Essential for data buffering in communication devices, the S29GL256P11TFIV13 supports high-speed operations and data integrity, crucial for modern communication infrastructures.
- Consumer Electronics: Used in devices such as set-top boxes and gaming consoles, it provides the high-speed, high-capacity memory necessary for user-friendly and responsive interfaces.
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