S29GL256P11TAIV10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Alternate Memory Width :

8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Common Flash Interface :

yes

Length :

18.4mm

Terminal Position :

Dual

Packaging :

Tray

Voltage - Supply :

1.65V~3.6V

ECCN Code :

3A991.B.1.A

Terminal Finish :

Tin/Lead (Sn/Pb)

Width :

14mm

Supply Voltage-Min (Vsup) :

2.7V

Number of Terminations :

56

Radiation Hardening :

No

Series :

GL-P

Command User Interface :

yes

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Density :

256 Mb

Standby Current-Max :

0.000005A

Organization :

256MX1

Write Cycle Time - Word, Page :

110ns

Memory Width :

1

Memory Interface :

Parallel

HTS Code :

8542.32.00.51

Access Time (Max) :

110 ns

Memory Type :

Non-Volatile

Operating Temperature :

-40°C~85°C TA

Memory Size :

256Mb 32M x 8

JESD-30 Code :

R-PDSO-G56

Page Size :

8/16words

RoHS Status :

ROHS3 Compliant

Programming Voltage :

3V

Supply Current-Max :

0.11mA

Power Supplies :

1.8/3.33/3.3V

Surface Mount :

yes

Mounting Type :

Surface Mount

Number of Sectors/Size :

256

Sector Size :

128K

Supply Voltage :

3V

Data Polling :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Number of Functions :

1

Peak Reflow Temperature (Cel) :

240

Supply Voltage-Max (Vsup) :

3.6V

Memory Format :

Flash

Ready/Busy :

yes

JESD-609 Code :

e0

Terminal Pitch :

0.5mm

Toggle Bit :

yes

Height Seated (Max) :

1.2mm