S29GL256P11TAI010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Supply Voltage-Min (Vsup) :

2.7V

Factory Lead Time :

6 Weeks

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Number of Functions :

1

Width :

14mm

Operating Temperature :

-40°C~85°C TA

Memory Width :

1

Programming Voltage :

3V

Command User Interface :

yes

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

110ns

Sector Size :

128K

Radiation Hardening :

No

Length :

18.4mm

Data Polling :

yes

Published :

2003

Page Size :

8/16words

Height Seated (Max) :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

30

Series :

GL-P

Memory Format :

Flash

Packaging :

Tray

Common Flash Interface :

yes

Mounting Type :

Surface Mount

Memory Type :

Non-Volatile

Peak Reflow Temperature (Cel) :

240

ECCN Code :

3A991.B.1.A

Number of Terminations :

56

Terminal Pitch :

0.5mm

Power Supplies :

3/3.3V

Ready/Busy :

yes

Memory Size :

256Mb 32M x 8

Density :

256 Mb

JESD-609 Code :

e0

Supply Current-Max :

0.11mA

RoHS Status :

ROHS3 Compliant

Voltage - Supply :

2.7V~3.6V

Number of Sectors/Size :

256

HTS Code :

8542.32.00.51

Toggle Bit :

yes

Alternate Memory Width :

8

Supply Voltage-Max (Vsup) :

3.6V

Terminal Finish :

Tin/Lead (Sn/Pb)

Access Time (Max) :

110 ns

Number of Pins :

56

Standby Current-Max :

0.000005A

Supply Voltage :

3V

Surface Mount :

yes

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

3 (168 Hours)