S29GL256P11FFIV10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Series :

GL-P

HTS Code :

8542.32.00.51

Access Time (Max) :

110 ns

Supply Voltage-Min (Vsup) :

2.7V

Data Bus Width :

8B

Memory Format :

Flash

Number of Functions :

1

Sync/Async :

ASYNCHRONOUS

Memory Interface :

Parallel

Memory Type :

Non-Volatile

Data Polling :

yes

Number of Pins :

64

Ready/Busy :

yes

Nominal Supply Current :

110mA

Memory Width :

1

Height Seated (Max) :

1.4mm

Terminal Pitch :

1mm

Supply Voltage-Max (Vsup) :

3.6V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Toggle Bit :

yes

REACH SVHC :

No SVHC

Organization :

256MX1

Write Cycle Time - Word, Page :

110ns

Radiation Hardening :

No

Power Supplies :

1.8/3.33/3.3V

Factory Lead Time :

16 Weeks

Common Flash Interface :

yes

JESD-609 Code :

e1

Memory Size :

256Mb 32M x 8

Mount :

Surface Mount

Alternate Memory Width :

8

Number of Sectors/Size :

256

Programming Voltage :

3V

Published :

2012

Peak Reflow Temperature (Cel) :

260

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Number of Terminations :

64

Density :

256 Mb

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Voltage - Supply :

1.65V~3.6V

Command User Interface :

yes

Supply Voltage :

3V

Operating Temperature :

-40°C~85°C TA

Package / Case :

64-LBGA

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tray

Sector Size :

128K

Standby Current-Max :

0.000005A

RoHS Status :

ROHS3 Compliant

Page Size :

8/16words

Length :

13mm