S29GL256P10FAI022

Manufacturer :

Infineon Technologies

Product Category :

Memory

Density :

256 Mb

Voltage - Supply :

2.7V~3.6V

JESD-609 Code :

e0

Alternate Memory Width :

8

Write Cycle Time - Word, Page :

100ns

Toggle Bit :

yes

Width :

11mm

Sync/Async :

ASYNCHRONOUS

Access Time (Max) :

100 ns

RoHS Status :

Non-RoHS Compliant

Height Seated (Max) :

1.4mm

Power Supplies :

3/3.3V

Package / Case :

64-LBGA

Number of Pins :

64

Common Flash Interface :

yes

Memory Size :

256Mb 32M x 8

Number of Functions :

1

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

240

Nominal Supply Current :

110mA

HTS Code :

8542.32.00.51

Terminal Pitch :

1mm

Organization :

256MX1

Supply Voltage-Max (Vsup) :

3.6V

Sector Size :

128K

Programming Voltage :

3V

Ready/Busy :

yes

Operating Temperature :

-40°C~85°C TA

Terminal Finish :

Tin/Lead (Sn/Pb)

Supply Voltage :

3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Sectors/Size :

256

Supply Voltage-Min (Vsup) :

2.7V

Terminal Position :

BOTTOM

Factory Lead Time :

16 Weeks

Number of Terminations :

64

Memory Width :

1

Radiation Hardening :

No

Memory Type :

Non-Volatile

Published :

2003

Series :

GL-P

Mounting Type :

Surface Mount

Command User Interface :

yes

Length :

13mm

Memory Format :

Flash

Data Polling :

yes

Packaging :

Tape and Reel (TR)

Page Size :

8/16words

Memory Interface :

Parallel

Standby Current-Max :

0.000005A