S29GL128S10DHI013
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- Mfr.Part #
- S29GL128S10DHI013
- Manufacturer
- Infineon Technologies
- Package / Case
- 64-LBGA
- Datasheet
- Download
- Description
- IC FLASH 128MBIT PARALLEL 64FBGA
- Stock
- 4,400
- In Stock ：
- 4,400
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Word Size :
- 16b
- Standby Current-Max :
- 0.0001A
- Toggle Bit :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -40°C~85°C TA
- Number of Terminations :
- 64
- Terminal Pitch :
- 1mm
- Height Seated (Max) :
- 1.4mm
- Voltage - Supply :
- 2.7V~3.6V
- Ready/Busy :
- yes
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Sector Size :
- 64K
- JESD-609 Code :
- e1
- Power Supplies :
- 3/3.3V
- Sync/Async :
- ASYNCHRONOUS
- Memory Width :
- 8
- Data Polling :
- yes
- Number of Sectors/Size :
- 128
- Factory Lead Time :
- 13 Weeks
- HTS Code :
- 8542.32.00.51
- Length :
- 9mm
- Package / Case :
- 64-LBGA
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Memory Size :
- 128Mb 8M x 16
- Number of Pins :
- 64
- ECCN Code :
- 3A991.B.1.A
- Address Bus Width :
- 23b
- Density :
- 128 Mb
- Write Cycle Time - Word, Page :
- 60ns
- Memory Interface :
- Parallel
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Memory Type :
- Non-Volatile
- Supply Voltage :
- 3V
- Published :
- 2017
- Packaging :
- Tape and Reel (TR)
- Supply Voltage-Max (Vsup) :
- 3.6V
- Organization :
- 16MX8
- Number of Functions :
- 1
- Common Flash Interface :
- yes
- Programming Voltage :
- 2.7V
- Qualification Status :
- Not Qualified
- Access Time :
- 100ns
- Command User Interface :
- yes
- Page Size :
- 16words
- Series :
- GL-S
- Memory Format :
- Flash
- Nominal Supply Current :
- 60mA
- Supply Voltage-Min (Vsup) :
- 2.7V
- Datasheets
- S29GL128S10DHI013
Memory Infineon Technologies S29GL128S10DHI013 Overview
The Memory Infineon Technologies S29GL128S10DHI013 IC FLASH offers a robust and reliable storage solution, ideal for a wide range of demanding applications. This high-capacity flash memory device provides 128Mbit of storage, integrated into a compact 64FBGA package. Designed by Infineon Technologies, a leader in semiconductor solutions, this product ensures high performance and durability. Its parallel interface facilitates rapid data transfer rates, making it an excellent choice for systems requiring quick access to large amounts of data. The use of advanced technology in manufacturing this IC ensures low power consumption and high reliability, essential for industrial and commercial applications where stability and efficiency are paramount.
S29GL128S10DHI013 Features
This IC FLASH memory module boasts several key features that make it highly suitable for a variety of demanding applications. It offers a large 128Mbit capacity for substantial data storage. The parallel communication interface ensures high-speed data access and transfer, while the 64FBGA packaging makes it both space-efficient and robust, suitable for compact system designs. Additionally, the device's built-in error correction capabilities enhance data integrity, essential in critical systems operations.
S29GL128S10DHI013 Applications
- Automotive Electronics: Used in engine control units, infotainment systems, and advanced driver-assistance systems (ADAS) where reliable and quick data storage is crucial.
- Communication Equipment: Integral for routers, switches, and other network infrastructure where high-speed data throughput and error-free storage are needed.
- Consumer Electronics: Applied in digital cameras, video recorders, and gaming consoles where large storage capacity and fast access speeds enhance user experience.
- Industrial Automation: Facilitates operations in complex machinery and production lines requiring robust, high-speed data logging and retrieval.
- Medical Devices: Critical for data-heavy applications like imaging systems and diagnostic equipment where precision and reliability in data storage can directly impact device performance and patient outcomes.
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