S29GL128S10DHB010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Surface Mount :

yes

Memory Density :

134217728 bit

Number of Terminations :

64

Number of Functions :

1

Access Time :

100ns

Memory Format :

Flash

Programming Voltage :

3V

Operating Temperature :

-40°C~105°C TA

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

3.6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Write Cycle Time - Word, Page :

60ns

Packaging :

Tray

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Series :

Automotive, AEC-Q100, GL-S

Terminal Pitch :

1mm

Supply Voltage :

3V

Organization :

16MX8

Length :

9mm

Package / Case :

64-LBGA

JESD-609 Code :

e1

Width :

9mm

Supply Voltage-Min (Vsup) :

2.7V

Memory Width :

8

Factory Lead Time :

13 Weeks

Memory Size :

128Mb 8M x 16

Terminal Position :

BOTTOM

HTS Code :

8542.32.00.51

Operating Mode :

ASYNCHRONOUS

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Voltage - Supply :

2.7V~3.6V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Memory Interface :

Parallel

JESD-30 Code :

S-PBGA-B64

Memory Type :

Non-Volatile

Height Seated (Max) :

1.4mm