S29GL128P11WEI019
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- Mfr.Part #
- S29GL128P11WEI019
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IC FLASH 128MBIT PARALLEL WAFER
- Stock
- 5,477
- In Stock ：
- 5,477
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Memory Format :
- Flash
- Package / Case :
- Die
- RoHS Status :
- ROHS3 Compliant
- Access Time (Max) :
- 110 ns
- HTS Code :
- 8542.32.00.51
- ECCN Code :
- 3A991.B.1.A
- Programming Voltage :
- 3V
- Memory Width :
- 1
- JESD-30 Code :
- R-XUUC-N62
- Mounting Type :
- Surface Mount
- Terminal Position :
- UPPER
- Memory Size :
- 128Mb 16M x 8
- Factory Lead Time :
- 50 Weeks
- Operating Temperature :
- -40°C~85°C TA
- Organization :
- 128MX1
- Memory Type :
- Non-Volatile
- Voltage - Supply :
- 2.7V~3.6V
- Memory Interface :
- Parallel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage-Min (Vsup) :
- 2.7V
- Packaging :
- Bulk
- Supply Voltage-Max (Vsup) :
- 3.6V
- Surface Mount :
- yes
- Supply Voltage :
- 3V
- Write Cycle Time - Word, Page :
- 110ns
- Number of Pins :
- 725
- Series :
- GL-P
- Memory Density :
- 134217728 bit
- Number of Terminations :
- 62
- Number of Functions :
- 1
- Operating Mode :
- ASYNCHRONOUS
- Qualification Status :
- Not Qualified
- Datasheets
- S29GL128P11WEI019
GL-P Memory IC GL-P Series
S29GL128P11WEI019 Overview
In terms of its memory type, it can be classified as Non-Volatile. The case comes in Bulk size. The case is embedded in Die. Memory size on the chip is 128Mb 16M x 8. This device uses takes advantage of the FLASH format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 62 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. An 725-pin package is used to package this memory device. GL-P series memory devices play an important role in the applications they target. A programming voltage of 3V is required to alter the state of certain nonvolatile memory arrays.
S29GL128P11WEI019 Features
Package / Case: Die
725 Pins
S29GL128P11WEI019 Applications
There are a lot of Cypress Semiconductor Corp
S29GL128P11WEI019 Memory applications.
- eSRAM
- mainframes
- multimedia computers
- networking
- personal computers
- servers
- supercomputers
- telecommunications
- workstations,
- DVD disk buffer
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