S29GL128P11TFIV13

Manufacturer :

Infineon Technologies

Product Category :

Memory

Sector Size :

128K

Density :

128 Mb

RoHS Status :

ROHS3 Compliant

Write Cycle Time - Word, Page :

110ns

Memory Format :

Flash

Terminal Pitch :

0.5mm

Programming Voltage :

3V

Number of Pins :

56

Contact Plating :

Tin

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Sync/Async :

ASYNCHRONOUS

Voltage - Supply :

1.65V~3.6V

Command User Interface :

yes

Mount :

Surface Mount

Series :

GL-P

JESD-609 Code :

e3

Published :

2011

Packaging :

Tape and Reel (TR)

Alternate Memory Width :

8

Radiation Hardening :

No

Memory Size :

128M 16M x 8

ECCN Code :

3A991.B.1.A

Supply Voltage-Max (Vsup) :

3.6V

Time@Peak Reflow Temperature-Max (s) :

40

Common Flash Interface :

yes

Nominal Supply Current :

110mA

Data Polling :

yes

Mounting Type :

Surface Mount

Memory Width :

1

Supply Voltage :

3V

Ready/Busy :

yes

Organization :

128MX1

Height Seated (Max) :

1.2mm

Factory Lead Time :

12 Weeks

HTS Code :

8542.32.00.51

Page Size :

8/16words

Terminal Position :

Dual

Number of Functions :

1

Peak Reflow Temperature (Cel) :

260

Standby Current-Max :

0.000005A

Length :

18.4mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Data Bus Width :

8B

Memory Type :

Non-Volatile

Supply Voltage-Min (Vsup) :

2.7V

Number of Sectors/Size :

128

Toggle Bit :

yes

Memory Interface :

Parallel

Number of Terminations :

56

Power Supplies :

1.8/3.33/3.3V

Access Time (Max) :

110 ns

Operating Temperature :

-40°C~85°C TA