S29GL128N10TFI010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Position :

Dual

Supply Voltage-Max (Vsup) :

3.6V

Sync/Async :

ASYNCHRONOUS

Number of Terminations :

56

Density :

128 Mb

Operating Temperature :

-40°C~85°C TA

Memory Size :

128Mb 16M x 8 8M x 16

Radiation Hardening :

No

Mount :

Surface Mount

Supply Voltage-Min (Vsup) :

2.7V

Terminal Pitch :

0.5mm

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Voltage - Supply :

2.7V~3.6V

Organization :

8MX16

Memory Width :

16

Number of Pins :

56

Width :

14mm

Memory Type :

Non-Volatile

Series :

GL-N

Memory Format :

Flash

Alternate Memory Width :

8

Packaging :

Tray

Length :

18.4mm

Access Time (Max) :

100 ns

Height Seated (Max) :

1.2mm

Nominal Supply Current :

90mA

JESD-609 Code :

e3

Write Cycle Time - Word, Page :

100ns

HTS Code :

8542.32.00.51

Factory Lead Time :

13 Weeks

Memory Interface :

Parallel

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

Programming Voltage :

3V

Mounting Type :

Surface Mount

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

3V