S29GL064S80TFB040

Manufacturer :

Infineon Technologies

Product Category :

Memory

Length :

18.4mm

JESD-609 Code :

e3

Alternate Memory Width :

8

Voltage - Supply :

2.7V~3.6V

Memory Density :

67108864 bit

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

260

Memory Format :

Flash

Terminal Finish :

Matte Tin (Sn)

Screening Level :

AEC-Q100

Height Seated (Max) :

1.2mm

Programming Voltage :

3V

Memory Interface :

Parallel

Series :

GL-S

Operating Mode :

ASYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Pitch :

0.5mm

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Factory Lead Time :

13 Weeks

Supply Voltage-Max (Vsup) :

3.6V

Operating Temperature :

-40°C~105°C TA

Mounting Type :

Surface Mount

Memory Type :

Non-Volatile

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Memory Size :

64Mb 8M x 8 4M x 16

Number of Terminations :

48

Width :

12mm

Organization :

4MX16

Supply Voltage :

3V

Write Cycle Time - Word, Page :

60ns

JESD-30 Code :

R-PDSO-G48

Supply Voltage-Min (Vsup) :

2.7V

Packaging :

Tray

Memory Width :

16

Terminal Position :

Dual

Access Time :

80ns