S29GL032N90TAI020

Manufacturer :

Infineon Technologies

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

HTS Code :

8542.32.00.51

JESD-30 Code :

R-PDSO-G56

Supply Voltage-Min (Vsup) :

2.7V

Power Supplies :

3/3.3V

Organization :

2MX16

Number of Sectors/Size :

64

Ready/Busy :

yes

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Terminal Position :

Dual

Number of Functions :

1

Operating Temperature :

-40°C~85°C TA

Supply Current-Max :

0.05mA

Common Flash Interface :

yes

Mounting Type :

Surface Mount

Operating Mode :

ASYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

30

Supply Voltage :

3V

Qualification Status :

Not Qualified

ECCN Code :

3A991.B.1.A

Memory Width :

16

Height Seated (Max) :

1.2mm

Peak Reflow Temperature (Cel) :

240

Programming Voltage :

3V

Memory Interface :

Parallel

Terminal Finish :

Tin/Lead (Sn/Pb)

Memory Type :

Non-Volatile

Standby Current-Max :

0.000005A

Series :

GL-N

Command User Interface :

yes

Terminal Pitch :

0.5mm

Write Cycle Time - Word, Page :

90ns

Supply Voltage-Max (Vsup) :

3.6V

Memory Format :

Flash

Width :

14mm

Page Size :

8/16words

Boot Block :

BOTTOM/TOP

Toggle Bit :

yes

Memory Density :

33554432 bit

Number of Terminations :

56

Sector Size :

64K

JESD-609 Code :

e0

Memory Size :

32Mb 4M x 8 2M x 16

Alternate Memory Width :

8

Access Time (Max) :

90 ns

Data Polling :

yes

Packaging :

Tray

Voltage - Supply :

2.7V~3.6V

Surface Mount :

yes

Length :

18.4mm