S29GL032N90TAI010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Common Flash Interface :

yes

JESD-30 Code :

R-PDSO-G56

Memory Size :

32Mb 4M x 8 2M x 16

Terminal Pitch :

0.5mm

Time@Peak Reflow Temperature-Max (s) :

30

Width :

14mm

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Number of Sectors/Size :

64

Supply Voltage-Min (Vsup) :

2.7V

Density :

32 Mb

Power Supplies :

3/3.3V

HTS Code :

8542.32.00.51

Ready/Busy :

yes

Mounting Type :

Surface Mount

Supply Voltage :

3V

Length :

18.4mm

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Height Seated (Max) :

1.2mm

Programming Voltage :

3V

Factory Lead Time :

50 Weeks

Data Polling :

yes

Standby Current-Max :

0.000005A

Packaging :

Tray

Access Time (Max) :

90 ns

Radiation Hardening :

No

JESD-609 Code :

e0

Write Cycle Time - Word, Page :

90ns

Memory Interface :

Parallel

Command User Interface :

yes

Voltage - Supply :

2.7V~3.6V

Alternate Memory Width :

8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Max (Vsup) :

3.6V

Series :

GL-N

Memory Format :

Flash

Supply Current-Max :

0.05mA

Terminal Position :

Dual

Operating Temperature :

-40°C~85°C TA

Organization :

2MX16

Toggle Bit :

yes

Memory Width :

16

Page Size :

8/16words

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Functions :

1

Number of Terminations :

56

Memory Type :

Non-Volatile

Peak Reflow Temperature (Cel) :

240

Sector Size :

64K