S29GL032N11TFIV10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Data Polling :

yes

Terminal Position :

Dual

Memory Interface :

Parallel

Supply Voltage-Min (Vsup) :

2.7V

HTS Code :

8542.32.00.51

Sync/Async :

ASYNCHRONOUS

Packaging :

Tray

Number of Functions :

1

Write Cycle Time - Word, Page :

110ns

Sector Size :

64K

Power Supplies :

1.8/3.33/3.3V

Programming Voltage :

3V

Series :

GL-N

Memory Size :

32Mb 4M x 8 2M x 16

Time@Peak Reflow Temperature-Max (s) :

40

Page Size :

8/16words

Terminal Pitch :

0.5mm

Supply Voltage :

3V

Organization :

2MX16

Alternate Memory Width :

8

Peak Reflow Temperature (Cel) :

260

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Radiation Hardening :

No

Common Flash Interface :

yes

Ready/Busy :

yes

Number of Terminations :

56

Memory Type :

Non-Volatile

Height Seated (Max) :

1.2mm

Factory Lead Time :

6 Weeks

Density :

32 Mb

Standby Current-Max :

0.000005A

RoHS Status :

ROHS3 Compliant

Published :

2003

Voltage - Supply :

1.65V~3.6V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Access Time (Max) :

110 ns

Supply Voltage-Max (Vsup) :

3.6V

Length :

18.4mm

JESD-609 Code :

e3

Data Bus Width :

16b

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Boot Block :

BOTTOM/TOP

Number of Pins :

56

Toggle Bit :

yes

Memory Width :

16

Memory Format :

Flash

Operating Temperature :

-40°C~85°C TA

Nominal Supply Current :

50mA

ECCN Code :

3A991.B.1.A

Command User Interface :

yes

Number of Sectors/Size :

64

Mount :

Surface Mount