S29GL032N11FFIV10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Supply Voltage-Min (Vsup) :

2.7V

Supply Current-Max :

0.05mA

Memory Size :

32Mb 4M x 8 2M x 16

Sector Size :

64K

Memory Width :

16

Series :

GL-N

Package / Case :

64-LBGA

JESD-609 Code :

e1

Memory Type :

Non-Volatile

Number of Terminations :

64

Peak Reflow Temperature (Cel) :

260

Programming Voltage :

3V

Operating Mode :

ASYNCHRONOUS

Write Cycle Time - Word, Page :

110ns

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Pitch :

1mm

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

3.6V

Operating Temperature :

-40°C~85°C TA

Memory Interface :

Parallel

Length :

13mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Organization :

2MX16

Packaging :

Tray

Memory Density :

33554432 bit

HTS Code :

8542.32.00.51

Surface Mount :

yes

Memory Format :

Flash

Command User Interface :

yes

Number of Sectors/Size :

64

Ready/Busy :

yes

Width :

11mm

Qualification Status :

Not Qualified

Supply Voltage :

3V

Access Time (Max) :

110 ns

Toggle Bit :

yes

Number of Pins :

64

Power Supplies :

1.8/3.33/3.3V

Boot Block :

BOTTOM/TOP

Data Polling :

yes

Terminal Position :

BOTTOM

Alternate Memory Width :

8

Page Size :

8/16words

Standby Current-Max :

0.000005A

Number of Functions :

1

Published :

2003

Voltage - Supply :

1.65V~3.6V

Mounting Type :

Surface Mount

Common Flash Interface :

yes

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Height Seated (Max) :

1.4mm